国家/地区 China（4）
关键词 FIELD EFFECT TRANSISTOR（4）
出版物
出版时间 2016（4）
机构 CHINESE ACAD.（2）
作者 JIN Z（2） MAO DC（2） PENG SA（2） SHI JY（2）
WANG SQ（2） ZHANG DY（2）

Towards a cleaner graphene surface in graphene field effect transistor via N,N-Dimethylacetamide

MATERIALS RESEARCH EXPRESS

MAO DC, PENG SA, WANG SQ, ZHANG DY, SHI JY, WANG XN, JIN Z

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

Characterization and preliminary application of top-gated graphene ion-sensitive field effect transistors

ACTA PHYSICA SINICA

WU CY, DU XW, ZHOU L, CAI Q, JIN Y, TANG L, ZHANG HG, HU GH, JIN QH

Intrinsic photo-conductance triggered by the plasmonic effect in graphene for terahertz detection

NANOTECHNOLOGY

WANG L, CHEN XS, LU W