国家/地区 China（2）
关键词 GALLIUM NITRIDE（4）
出版物
出版时间 2016（4）
机构 CHINESE ACAD.（2）
作者 LIU ZQ（2） WANG GH（2） YI XY（2）

Epitaxy of GaN Nanowires on Graphene

NANO LETTERS

KUMARESAN V, LARGEAU L, MADOURI A, GLAS F, ZHANG HZ, OEHLER F, CAVANNA A, BABICHEV A, TRAVERS L, GOGNEAU N, TCHERNYCHEVA M, HARMAND JC

Extended line defects in BN, GaN, and AlN semiconductor materials: Graphene-like structures

CHEMICAL PHYSICS LETTERS

CAMACHOMOJICA DC, LOPEZURIAS F

Direct growth of graphene on gallium nitride using C2H2 as carbon source

FRONTIERS OF PHYSICS

WANG B, ZHAO Y, YI XY, WANG GH, LIU ZQ, DUAN RR, HUANG P, WANG JX, LI JM

Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes

ACS APPLIED MATERIALS INTERFACES

WANG LC, CHENG Y, LIU ZQ, YI XY, ZHU HW, WANG GH