国家/地区 Japan（6）
关键词
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2016（6）
机构 TOHOKU UNIV（6）
作者 FUKIDOME H（6）

Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion

APPLIED PHYSICS LETTERS

HASEGAWA M, TASHIMA K, KOTSUGI M, OHKOCHI T, SUEMITSU M, FUKIDOME H

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)

DIAMOND RELATED MATERIALS

SAMBONSUGE S, JIAO S, NAGASAWA H, FUKIDOME H, FILIMONOV SN, SUEMITSU M

Graphene on C-terminated face of 4H-SiC observed by noncontact scanning nonlinear dielectric potentiometry

JAPANESE JOURNAL OF APPLIED PHYSICS

YAMASUE K, FUKIDOME H, TASHIMA K, SUEMITSU M, CHO Y

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

JOURNAL OF LIGHTWAVE TECHNOLOGY

SUGAWARA K, KAWASAKI T, TAMAMUSHI G, MASTURA H, DOBROIU A, YOSHIDA T, SUEMITSU T, FUKIDOME H, SUEMITSU M, RYZHII V, IWATSUKI K, KUWANO S, KANI JI, TERADA J, OTSUJI T