国家/地区 Japan（2）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（2）
出版时间 2016（2）
机构 TOHOKU UNIV（2）
作者 OTSUJI T（2）

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M