国家/地区 Korea（2）
关键词 CAPACITANCE EQUIVALENT OXIDE THICKNES（2）
出版物
出版时间 2016（2）
机构 SAMSUNG ADV .（2）
作者 PARK S（2）

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

ACS Nano

LEE Y, JEON W, CHO Y, LEE MH, JEONG SJ, PARK J, PARK S