国家/地区 Spain（8）
关键词 GRAPHENE（3） COMPACT MODEL（2） FET（2）
INTRINSIC CAPACITAN.（2） VERILOGA（2）
出版物 IEEE TRANSACTIONS O.（3）
出版时间 2016（8）
机构 UNIV AUTONOMA BARCELONA（8）
作者 JIMENEZ D（4） BAEZA M（2） BRENNAN LJ（2） CESPEDES F（2）
GUN KO YK（2） MUNOZ J（2） PASADAS F（2）

The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHAVES FA, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part II: Circuit Performance Benchmarking

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

2D MATERIALS

FEIJOO PC, JIMENEZ D, CARTOIXA X

Time-dependent simulation of particle and displacement currents in THz graphene transistors

JOURNAL OF STATISTICAL MECHANICSTHEORY EXPERIMENT

ZHAN Z, COLOMES E, BENALI A, MARIAN D, ORIOLS X

Amperometric thyroxine sensor using a nanocomposite based on graphene modified with gold nanoparticles carrying a thiolated beta-cyclodextrin

MICROCHIMICA ACTA

MUNOZ J, RIBAMOLINER M, BRENNAN LJ, GUN KO YK, CESPEDES F, GONZALEZCAMPO A, BAEZA M

Characterization protocol to improve the electroanalytical response of graphene-polymer nanocomposite sensors

COMPOSITES SCIENCE TECHNOLOGY

MUNOZ J, BRENNAN LJ, CESPEDES F, GUN KO YK, BAEZA M

Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for resistive switching memory applications

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

WU Q, CLARAMUNT S, PORTI M, NAFRIA M, AYMERICH X