国家/地区 China（8）
关键词 GRAPHENE（3） FIELDEFFECT TRANSIS.（2）
出版物 CARBON（2）
出版时间 2017（8）
机构 HEBEI SEMICO.（3） CHINESE ACAD.（2） NORTH CHINA .（2）
作者 FENG ZH（8）

Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene

ACTA PHYSICA SINICA

WANG B, FANG YL, YIN JY, LIU QB, ZHANG ZR, GUO YM, LI J, LU WL, FENG ZH

Oxygen Plasma-Treated Graphene Oxide Surface Functionalization for Sensitivity Enhancement of Thin-Film Piezoelectric Acoustic Gas Sensors

ACS APPLIED MATERIALS INTERFACES

ZHAO HY, FAN SQ, CHEN Y, FENG ZH, ZHANG H, PANG W, ZHANG DH, ZHANG ML

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

CARBON

QIN H, SUN JD, HE ZZ, LI XX, LI X, LIANG SX, YU C, FENG ZH, TU XC, JIN BB, CHEN J, WU PH

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH

Effects of torsion on the thermal conductivity of multi-layer graphene

JOURNAL OF APPLIED PHYSICS

SI C, LU G, CAO BY, WANG XD, FAN Z, FENG ZH

Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor

CARBON

QIN H, SUN JD, LIANG SX, LI X, YANG XX, HE ZH, YU C, FENG ZH

Impacts of potential models on calculating the thermal conductivity of graphene using non-equilibrium molecular dynamics simulations

INTERNATIONAL JOURNAL OF HEAT MASS TRANSFER

SI C, WANG XD, FAN Z, FENG ZH, CAO BY