国家/地区 Germany（5）
关键词 DOPING（5）
出版物
出版时间 2017（5）
机构
作者

Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

MCMANUS JB, HENNESSY A, CULLEN CP, HALLAM T, MCEVOY N, DUESBERG GS

Doping of graphene induced by boron/silicon substrate

NANOTECHNOLOGY

DIANAT A, LIAO ZQ, GALL M, ZHANG T, GUTIERREZ R, ZSCHECH E, CUNIBERTI G

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

ACS APPLIED MATERIALS INTERFACES

SARAU G, HEILMANN M, BASHOUTI M, LATZEL M, TESSAREK C, CHRISTIANSEN S

Work function of graphene multilayers on SiC(0001)

2D MATERIALS

MAMMADOV S, RISTEIN J, KRONE J, RAIDEL C, WANKE M, WIESMANN V, SPECK F, SEYLLER T

Noninvasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization

NANO LETTERS

WAGNER S, DIEING T, CENTENO A, ZURUTUZA A, SMITH AD, OSTLING M, KATARIA S, LEMME MC