国家/地区 Usa（5）
关键词
出版物
出版时间 2017（5）
机构 NIST（5）
作者 ELMQUIST RE（5）

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

PHYSICAL REVIEW B

HILL HM, RIGOSI AF, CHOWDHURY S, YANG YF, NGUYEN NV, TAVAZZA F, ELMQUIST RE, NEWELL DB, WALKER ARH

Chemical-doping-driven crossover from graphene to "ordinary metal" in epitaxial graphene grown on SiC

NANOSCALE

CHUANG CS, YANG YF, POOKPANRATANA S, HACKER CA, LIANG CT, ELMQUIST RE

Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations

SMALL

RIGOSI AF, GLAVIN NR, LIU CI, YANG YF, OBRZUT J, HILL HM, HU JN, LEE HY, WALKER ARH, RICHTER CA, ELMQUIST RE, NEWELL DB

Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC

2D MATERIALS

LIU CW, CHUANG CS, YANG YF, ELMQUIST RE, HO YJ, LEE HY, LIANG CT

Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

ACS OMEGA

RIGOSI AF, LIU CI, GLAVIN NR, YANG YF, HILL HM, HU JN, WALKER ARH, RICHTER CA, ELMQUIST RE, NEWELL DB