国家/地区 China（3） Belgium（2）
关键词 CARRIER MOBILITY（8）
出版物
出版时间 2018（8）
机构 KATHOLIEKE U.（2）
作者 ASSELBERGHS .（2） CONTINO A（2） SOREE B（2） TOKEI Z（2）
WU XY（2）

Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

NANOSCALE RESEARCH LETTERS

YE ZQ, GENG H, ZHENG XP

Large-Area High-Quality AB-Stacked Bilayer Graphene on h-BN/Pt Foil by Chemical Vapor Deposition

ACS APPLIED MATERIALS INTERFACES

QAN Y, KANG DJ

Electronic properties and carrier mobility for penta-graphene nanoribbons with nonmetallic-atom -terminations

ORGANIC ELECTRONICS

LI YH, YUAN PF, FAN ZQ, ZHANG ZH

Equivalent circuit analysis of Al/rGO-TiO2 metal-semiconductor interface via impedance spectroscopy: Graphene induced improvement in carrier mobility and lifetime

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DAS M, DATTA J, SIL S, DEY A, JANA R, HALDER S, RAY PP

Boosting Carrier Mobility of Synthetic Few Layer Graphene on SiO2 by Interlayer Rotation and Decoupling

ADVANCED MATERIALS INTERFACES

WU XY, CHUANG YT, CONTINO A, SOREE B, BREMS S, TOKEI Z, HEYNS M, HUYGHEBAERT C, ASSELBERGHS I

Modeling of Edge Scattering in Graphene Interconnects

IEEE ELECTRON DEVICE LETTERS

CONTINO A, CIOFI I, WU XY, ASSELBERGHS I, CELANO U, WILSON CJ, TOKEI Z, GROESENEKEN G, SOREE B

Tunable plasmon-induced transparency with graphene-based T-shaped array metasurfaces

OPTICS COMMUNICATIONS

NIU YY, WANG JC, HU ZD, ZHANG F

Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene

NANO RESEARCH

MURATA Y, CAVALLUCCI T, TOZZINI V, PAVLICEK N, GROSS L, MEYER G, TAKAMURA M, HIBINO H, BELTRAM F, HEUN S