国家/地区 China（6） Vietnam（4） Iran（3）
关键词 ELECTRIC FIELD（13）
出版物
出版时间 2018（13）
机构 LE QUY DON T.（3）
作者 NGUYEN CV（4） HIEU NN（3） PHUC HV（3） AMIN B（2）
ILYASOV VV（2）

Improved Armchair Hexagonal Graphene Ring Gas Sensor

IEEE SENSORS JOURNAL

OMIDI M, FAIZABADI E

Electronic Bloch oscillation in a pristine monolayer graphene

PHYSICS LETTERS A

HUANG TY, CHEN RF, MA TX, WANG LG, LIN HQ

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

Electronic properties of armchair graphene nanoribbons under uniaxial strain and electric field

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

JIANG LF, XU L, ZHANG J

Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

JOURNAL OF ALLOYS COMPOUNDS

PHUC HV, ILYASOV VV, HIEU NN, AMIN B, NGUYEN CV

First-principles calculation of effects of deformation and electric field action on electrical properties of Graphene

ACTA PHYSICA SINICA

LIU GL, YANG ZH

Electronic transport in Thue-Morse gapped graphene superlattice under applied bias

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

WANG MJ, ZHANG HM, LIU D

Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

SUPERLATTICES MICROSTRUCTURES

NGUYEN CV

Ion separation and water purification by applying external electric field on porous graphene membrane

NANO RESEARCH

LOHRASEBI A, RIKHTEHGARAN S

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

VACUUM

PHUC HV, ILYASOV VV, HIEU NN, NGUYEN CV