国家/地区 China（11） Iran（5） India（4） Vietnam（3）
Malaysia（2） Pakistan（2） Turkey（2） Usa（2）
关键词 GRAPHENE（9） REDUCED GRAPHENE OX.（4） DYESENSITIZED SOLAR.（3）
GRAPHENE OXIDE（3） SUPERCAPACITOR（3） OPTICAL PROPERTIE（2）
STRAIN（2） THIN FILM（2） TIO2（2）
ZINC OXIDE（2）
出版物 JOURNAL OF ELECTRONIC MATERIALS（41）
出版时间 2018（41）
机构 HCMC UNIV TE.（2）
作者 ALIAS NE（2） AUZAR Z（2） JOHARI Z（2） PHAM TT（2）
SAKINA SH（2） SPORKEN R（2）

Fast Response and High Sensitivity of Reduced Graphene Oxide/Gold Nano-hybrid for LPG Sensors at Room Temperature

JOURNAL OF ELECTRONIC MATERIALS

TAHERI M, FEIZABADI Z, JAFARI S, MANSOUR N

Microwave-Assisted Synthesis of N-Doped Graphene-Wrapped MnO2 Nanoflowers

JOURNAL OF ELECTRONIC MATERIALS

DURAIA EM, FAHAMI A, BEALL GW

Microstructure and Photocatalytic Properties of TiO2-Reduced Graphene Oxide Nanocomposites Prepared by Solvothermal Method

JOURNAL OF ELECTRONIC MATERIALS

LI D, DAI S, LI J, ZHANG C, RICHARDPLOUET M, GOULLET A, GRANIER A

Stack of Graphene/Copper Foils/Graphene by Low-Pressure Chemical Vapor Deposition as a Thermal Interface Material

JOURNAL OF ELECTRONIC MATERIALS

PHAM TT, HUYNH TH, DO QH, SPORKEN R

Tuning the Electronic Properties of Graphene Oxide Nanoribbons Through Different Oxygen Doping Configurations

JOURNAL OF ELECTRONIC MATERIALS

WANG WH, ZHAO CL, LI PF

Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications

JOURNAL OF ELECTRONIC MATERIALS

CICEK O, TAN SO, TECIMER H, ALTINDAL S

Probing Spintronic Features in Conduction through Silicene and Graphene Barriers

JOURNAL OF ELECTRONIC MATERIALS

MENESESGUSTIN D, TAVARES MRS

Tunable Thermoelectric Performance in Porous Armchair Graphene Nanoribbons as a Function of Strain, Pore Morphology and Temperature

JOURNAL OF ELECTRONIC MATERIALS

KAUR S, NARANG SB, RANDHAWA DKK

Waste Paper Pulp Derived Reduced Graphene Oxide for Antimicrobial Cement Composites

JOURNAL OF ELECTRONIC MATERIALS

KUMAR S, SINGH VP, VAISH R

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

JOURNAL OF ELECTRONIC MATERIALS

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