国家/地区 Iran（5） China（3）
关键词 ARMCHAIR GRAPHENE NANORIBBON（12）
出版物
出版时间 2019（12）
机构 ISLAMIC AZAD.（3） JIANGSU UNIV（2）
作者 LI TB（2） YANG B（2） YANG P（2）

Electronic structure, strain effects and transport property of armchair graphene nanoribbon with variously possible edge oxidation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

ZHAO T, FAN ZQ, ZHANG ZH, ZHOU RL

First-principles study on effect of partially hydrogenation and fluorination on the mechanical and electronic properties of the graphene nanoribbon under tensile elastic strain

CHEMICAL PHYSICS LETTERS

RI NC, WI JH, KIM CH, KIM JC, RI SI

Design of electromechanical switch based on armchair twisted graphene nanoribbons with doping and defect

PHYSICA BCONDENSED MATTER

FOTOOHI S, PASHANGPOUR M, LASHGARI H

Modeling of Armchair Graphene Nanoribbon Tunnel Field Effect Transistors for Low Power Applications

JOURNAL OF SEMICONDUCTOR TECHNOLOGY SCIENCE

SUHENDI E, HASANAH L, NOOR FA, KURNIASIH N, KHAIRURRIJAL

Effect of side gates doping on graphene self-switching nano-diode rectification

MATERIALS RESEARCH EXPRESS

GHAZIASADI H, JAMASB S, NAYEBI P, FOULADIAN M

First Principles Simulations of Phenol and Methanol Detector Based on Pristine Graphene Nanosheet and Armchair Graphene Nanoribbons

SENSORS

RASHID MH, KOEL A, RANG T

Effects of uniaxial strain on the performance of armchair graphene nanoribbon resonant tunneling diode

SEMICONDUCTOR SCIENCE TECHNOLOGY

ZOGHI M, KABIR MZ

Thermal properties of triangle nitrogen-doped graphene nanoribbons

PHYSICS LETTERS A

YANG B, LI DB, QI L, LI TB, YANG P

Resonant Tunneling Diode by Means of Compound Armchair Boron/Nitride and Graphene Nanoribbons

JOURNAL OF ELECTRONIC MATERIALS

GOHARRIZI AY

Investigation of thermal property of triangle vacancy nitrogen-doping graphene nanoribbons

COMPOSITE INTERFACES

GUO J, YANG B, YANG YQ, YUAN XM, GE DH, LI TB, YANG P