国家/地区 China（7）
关键词
出版物 APPLIED PHYSICS LET.（2） JOURNAL OF ELECTROA.（2）
出版时间 2020（9）
机构 CHINESE ACAD.（4） CHANGCHUN UN.（2）
作者 LU W（9）

Enhanced infrared photoresponse induced by symmetry breaking in a hybrid structure of graphene and plasmonic nanocavities

CARBON

GUO SK, ZHANG DH, ZHOU J, DENG J, YU Y, DENG JN, CAI QY, LI ZF, LU W, CHEN XS

The Dual Capacity Contribution Mechanism of SnSb-Anchored Nitrogen-Doped 3D Reduced Graphene Oxide Enhances the Performance of Sodium-Ion Batteries

CHEMELECTROCHEM

ZHANG GJ, ZENG SY, DUAN LF, ZHANG XY, WANG LY, YANG XJ, LI XS, LU W

A facile synthetic strategy of free-standing holey graphene paper as sulfur host for high-performance flexible lithium sulfur batteries

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

YANG J, SHAN XY, GUO ZX, DUAN LF, ZHANG XY, LU W

Asymmetric elastoplasticity of stacked graphene assembly actualizes programmable untethered soft robotics

NATURE COMMUNICATIONS

WANG S, GAO Y, WEI AR, XIAO P, LIANG Y, LU W, CHEN CY, ZHANG C, YANG GL, YAO HM, CHEN T

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020)

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

All-solid-state flexible supercapacitor using graphene/g-C(3)N(4)composite capacitor electrodes

JOURNAL OF MATERIALS SCIENCE

QU YD, ZHANG XY, LU W, YANG NJ, JIANG X

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Graphene quantum dots coated LiCoO2 for improved cycling stability an thermal safety at high voltage

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

SUN YP, DONG HC, WU K, CHEN X, WANG SF, GU W, HONG ZW, LIU M, SHEN YB, LU W

Thermal Management of High-Power Switching Transistors Using Thick CVD-Grown Graphene Nanomaterial

IEEE TRANSACTIONS ON POWER ELECTRONICS

TALESARA V, GARMAN PD, LEE JL, LU W