国家/地区 China（4） Russia（3） France（2）
关键词 SILICON CARBIDE（16）
出版物
出版时间 2020（16）
机构
作者 BARASH IS（2） LEBEDEV AA（2） LEBEDEV SP（2） ZUBOV AV（2）

High density synthesis of topological point defects in graphene on 6H-SiC(0001)

CARBON

BERRAHAL Q, CHACON C, AMARA H, BELLEC A, LATIL S, REPAIN V, ROUSSET S, LAGOUTE J, GIRARD Y

Interfacial coupled design of epitaxial Graphene@SiC Schottky junction with built-in electric field for high-performance anodes of lithium ion batteries

NANO ENERGY

SUN CL, WANG YJ, GU H, FAN HB, YANG GJ, IGNASZAK A, TANG XF, LIU D, ZHANG JJ

Reversible graphitization of SiC: A route towards high-quality graphene on a minimally step bunched substrate

APPLIED SURFACE SCIENCE

CIOCHON P, MARZEC M, OLSZOWSKA N, KOLODZIEJ J

Nanoscale profiling of multilayer graphene films on silicon carbide by a focused ion beam

DIAMOND RELATED MATERIALS

KOLOMIYTSEV AS, JITYAEV IL, SVETLICHNYI AM, FEDOTOV AA, AGEEV OA

Role of graphene nano-platelets on thermal conductivity and microstructure of TiB2-SiC ceramics

CERAMICS INTERNATIONAL

VAJDI M, MOGHANLOU FS, NEKAHI S, AHMADI Z, MOTALLEBZADEH A, JAFARZADEH H, ASL MS

Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

APPLIED SPECTROSCOPY

UEMURA S, VANTASIN S, KITAHAMA Y, TANAKA YY, SUZUKI T, DOUJIMA D, KANEKO T, OZAKI Y

Three-Dimensional SiC/Holey-Graphene/Holey-MnO2 Architectures for Flexible Energy Storage with Superior Power and Energy Densities

ACS APPLIED MATERIALS INTERFACES

CHEN YQ, ZHANG XN, XUE WJ, XIE ZP

Sample preparation and microscopical investigation techniques for metal and ceramics containing graphite and graphene-like layered particles

MICROSCOPY RESEARCH TECHNIQUE

BASKUT S, TURAN S

Controllable synthesis of SiC@Graphene core-shell nanoparticles via fluidized bed chemical vapor deposition

JOURNAL OF THE AMERICAN CERAMIC SOCIETY

ZHAO J, LIU ML, CHANG JX, SHAO YL, LIU B, LIU RZ

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

DENG M, FADIL D, WEI W, PALLECCHI E, HAPPY H, DAMBRINE G, DE MATOS M, ZIMMER T, FREGONESE S