国家/地区 China（5）
关键词 GAN（8）
出版物
出版时间 2022（8）
机构
作者 XU K（2）

Graphene/porous GaN Schottky Betacell

MICRO NANOSTRUCTURES

NAGHIPOUR Y, AMIRMAZLAGHANI M

Remote Epitaxy and Exfoliation of GaN via Graphene

ACS APPLIED ELECTRONIC MATERIALS

HAN X, YU JD, LI ZH, WANG X, HAO ZB, LUO Y, SUN CZ, HAN YJ, XIONG B, WANG J, LI HT, ZHANG YT, DUAN B, NING J, WU HD, WANG L

Graphene as a Transparent Conductive Electrode in GaN-Based LEDs

MATERIALS

ZHANG HH, MISCHKE J, MERTIN W, BACHER G

Hot carriers assisted mixed-dimensional graphene/MoS2/p-GaN light emitting diode

CARBON

LIU C, LU YH, YU XT, SHEN RJ, WU ZM, YANG ZS, YAN YF, FENG LX, LIN SS

Suppression of Surface Defects and Vibrational Coupling in GaN by a Graphene Monolayer

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

ZHENG CC, NING JQ, YE HG, ZHANG LX, XU K, ZHAO DG, NI ZH, WANG JN, XU SJ

Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene

ACS APPLIED MATERIALS INTERFACES

QU YP, XU Y, CAO B, WANG YN, WANG JF, SHI L, XU K

Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes

CRYSTALS

TANG PH, XIONG FZ, DU ZF, LI K, MEI Y, GUO WL, SUN J

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study

APPLIED SCIENCESBASEL

BORISENKO DP, GUSEV AS, KARGIN NI, DOBROKHOTOV PL, TIMOFEEV AA, LABUNOV VA, MIKHALIK MM, KATIN KP, MASLOV MM, DZHUMAEV PS, KOMISSAROV IV