国家/地区 Korea（6）
关键词
出版物 ADVANCED ELECTRONIC MATERIALS（6）
出版时间 2022（6）
机构
作者 LEE S（2） TANIGUCHI T（2） WATANABE K（2）

Electric-Field-Tunable Bandgaps in the Inverse-Designed Nanoporous Graphene/Graphene Heterobilayers

ADVANCED ELECTRONIC MATERIALS

LEE B, KANG J

Contact Resistivity in Edge-Contacted Graphene Field Effect Transistors

ADVANCED ELECTRONIC MATERIALS

LEE S, CHOI H, MOON I, SHIN H, WATANABE K, TANIGUCHI T, YOO WJ

Selectively Defect-Healed Graphene Electrodes for Tungsten Diselenide Thin-Film Transistors

ADVANCED ELECTRONIC MATERIALS

KIM TI, PARK IJ

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors

ADVANCED ELECTRONIC MATERIALS

RYU H, KIM DH, KWON J, PARK SK, LEE W, SEO H, WATANABE K, TANIGUCHI T, KIM S, ZANDE AM, SON J, LEE GH

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro-Hole Patterning

ADVANCED ELECTRONIC MATERIALS

PYO G, LEE GJ, LEE S, YANG JH, HEO SJ, CHOI GH, CHA S, JANG JE

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device

ADVANCED ELECTRONIC MATERIALS

PARK JW, MOON CJ, JU YM, JANG YR, PARK SS, KIM HS