国家/地区 Iran（2）
关键词 RESONANT TUNNELING DIODE RTD（2）
出版物
出版时间 2020（2）
机构 ARAK UNIV（2）
作者 SANAEEPUR M（2）

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

SANAEEPUR M

Ultrascaled Resonant Tunneling Diodes Based on BN Decorated Zigzag Graphene Nanoribbon Lateral Heterostructures

IEEE TRANSACTIONS ON ELECTRON DEVICES

SANAEEPUR M, JAFARI MR, ESMAEILI M