国家/地区 Belgium（11）
关键词 GRAPHENE（5） RAMAN SPECTROSCOPY（2） TWISTED BILAYER GRA.（2）
出版物 CARBON（2） SCIENTIFIC REPORTS（2）
出版时间 2013（3） 2017（3） 2018（3）
机构 CATHOLIC UNIV LOUVAIN（12）
作者 RASKIN JP（12）

RETRACTION: Investigation of the origin of linear and nonlinear electrical behaviors of back gated monolayer graphene ribbons: Electrical and Raman monitoring

SUPERLATTICES MICROSTRUCTURES

FATES R, HADDAD PA, HUET B, BOURIDAH H, RASKIN JP

A Fast and Room-Temperature Operation Ammonia Sensor Based on Compound of Graphene With Polypyrrole

IEEE SENSORS JOURNAL

TANG XH, LAHEM D, RASKIN JP, GERARD P, GENG X, ANDRE N, DEBLIQUY M

Role of Cu foil in-situ annealing in controlling the size and thickness of CVD graphene domains

CARBON

HUET B, RASKIN JP

Intrinsic rectification in common-gated graphene field-effect transistors

NANO ENERGY

HADDAD PA, FLANDRE D, RASKIN JP

Twisted Bi-Layer Graphene: Microscopic Rainbows

SMALL

CAMPOSDELGADO J, ALGARASILLER G, SANTOS CN, KAISER U, RASKIN JP

CVD synthesis of mono- and few-layer graphene using alcohols at low hydrogen concentration and atmospheric pressure

CHEMICAL PHYSICS LETTERS

CAMPOSDELGADO J, BOTELLOMENDEZ AR, ALGARASILLER G, HACKENS B, PARDOEN T, KAISER U, DRESSELHAUS MS, CHARLIER JC, RASKIN JP

Raman scattering study of the phonon dispersion in twisted bilayer graphene

NANO RESEARCH

CAMPOSDELGADO J, CANCADO LG, ACHETE CA, JORIO A, RASKIN JP

Adhesionless and near-ideal contact behavior of graphene on Cu thin film

CARBON

HAMMAD M, ADJIZIAN JJ, SACRE CH, HUET B, CHARLIER JC, RASKIN JP, PARDOEN T

A Quasi-Static Model of Silicon Substrate Effects in Graphene Field Effect Transistors

IEEE ELECTRON DEVICE LETTERS

HADDAD PA, FLANDRE D, RASKIN JP

Pressure-Controlled Chemical Vapor Deposition of Single-Layer Graphene with Millimeter-Size Domains on Thin Copper Film

CHEMISTRY OF MATERIALS

HUET B, RASKIN JP