国家/地区 China（12）
关键词 CHARGE TRAP（2） GRAPHENE（2）
出版物 CARBON（2）
出版时间 2015（5） 2016（5）
机构 CHINESE ACAD SCI（12）
作者 WANG SQ（12）

First-principles investigation of the microscopic mechanism of the physical and chemical mixed adsorption of graphene on metal surfaces

RSC ADVANCES

ZHANG X, WANG SQ

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

Characterization of the quality of metal-graphene contact with contact end resistance measurement

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

WANG SQ, MAO DC, MUHAMMAD A, PENG SG, ZHANG DY, SHI JY, JIN Z

A more reliable measurement method for metal/graphene contact resistance

NANOTECHNOLOGY

WANG SQ, MAO DC, JIN Z, PENG SG, ZHANG DY, SHI JY, WANG XY

Hydroxyl-free buffered dielectric for graphene field-effect transistors

CARBON

JIN Z, MA P, WANG SQ, PENG SG, ZHANG DY, SHI JY, NIU JB, YU GH, WANG XY, LI M

The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity

CARBON

PENG SA, JIN Z, MA P, ZHANG DY, SHI JY, NIU JB, WANG XY, WANG SQ, LI M, LIU XY, YE TC, ZHANG YH, CHEN ZY, YU GH