国家/地区 China（12）
关键词
出版物
出版时间 2016（12）
机构 CHINESE ACAD SCI（12）
作者 JIN Z（12）

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Metal-Organic Framework-Induced Synthesis of Ultrasmall Encased NiFe Nanoparticles Coupling with Graphene as an Efficient Oxygen Electrode for a Rechargeable Zn-Air Battery

ACS CATALYSIS

ZHU JB, XIAO ML, ZHANG YL, JIN Z, PENG ZQ, LIU CP, CHEN SL, GE JJ, XING W

Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

ZHANG HR, ZHANG YQ, ZHANG YH, CHEN ZY, SUI YP, GE XM, DENG RX, YU GH, JIN Z, LIU XY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z

Surface-potential-based physical compact model for graphene field effect transistor

JOURNAL OF APPLIED PHYSICS

WANG LF, PENG SG, WANG W, XU GW, JI ZY, LU ND, LI L, JIN Z, LIU M

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

Characterization of the quality of metal-graphene contact with contact end resistance measurement

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

WANG SQ, MAO DC, MUHAMMAD A, PENG SG, ZHANG DY, SHI JY, JIN Z

High pressure-assisted transfer of ultraclean chemical vapor deposited graphene

APPLIED PHYSICS LETTERS

CHEN ZY, GE XM, ZHANG HR, ZHANG YH, SUI YP, YU GH, JIN Z, LIU XY

Ag/SnO2/graphene ternary nanocomposites and their sensing properties to volatile organic compounds

JOURNAL OF ALLOYS COMPOUNDS

GE S, ZHENG HX, SUN YF, JIN Z, SHAN JH, WANG C, WU H, LI MQ, MENG FL