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机构 GIK INST ENGN SCI TECHNOL（2）
作者 KHAN MF（2）

Gate-Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures

ADVANCED ENGINEERING MATERIALS

IQBAL MZ, SIDDIQUE S, KHAN MF, REHMAN AU, REHMAN A, EOM J

Interaction driven quantum Hall effect in artificially stacked graphene bilayers

SCIENTIFIC REPORTS

IQBAL MZ, IQBAL MW, SIDDIQUE S, KHAN MF, RAMAY SM, NAM J, KIM KS, EOM J