国家/地区 Usa（6）
关键词
出版物
出版时间 2012（3） 2014（3）
机构 GEORGIA INST TECHNOL（6）
作者 BALTAZAR J（6）

Formation of Air Stable Graphene p-n-p Junctions Using an Amine-Containing Polymer Coating

ADVANCED MATERIALS INTERFACES

SOJOUDI H, BALTAZAR J, TOLBERT L, HENDERSON C, GRAHAM S

Photochemical Doping and Tuning of the Work Function and Dirac Point in Graphene Using Photoacid and Photobase Generators

ADVANCED FUNCTIONAL MATERIALS

BALTAZAR J, SOJOUDI H, PANIAGUA SA, ZHANG SY, LAWSON RA, MARDER SR, GRAHAM S, TOLBERT LM, HENDERSON CL

Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal-organic species

MATERIALS HORIZONS

PANIAGUA SA, BALTAZAR J, SOJOUDI H, MOHAPATRA SK, ZHANG SY, HENDERSON CL, GRAHAM S, BARLOW S, MARDER SR

Facile Formation of Graphene P-N Junctions Using Self-Assembled Monolayers

JOURNAL OF PHYSICAL CHEMISTRY C

BALTAZAR J, SOJOUDI H, PANIAGUA SA, KOWALIK J, MARDER SR, TOLBERT LM, GRAHAM S, HENDERSON CL

Creating Graphene p-n Junctions Using Self-Assembled Monolayers

ACS APPLIED MATERIALS INTERFACES

SOJOUDI H, BALTAZAR J, TOLBERT LM, HENDERSON CL, GRAHAM S

Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SOJOUDI H, BALTAZAR J, HENDERSON C, GRAHAM S