国家/地区 Usa（5）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（5）
出版时间 2012（2）
机构 GEORGIA INST TECHNOL（5）
作者 BERGER C（5）

Wafer bonding solution to epitaxial graphene-silicon integration

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DONG R, GUO ZL, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, BHATTACHARYA SK, BERGER C, DE HEER WA

Epitaxial graphene

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DE HEER WA, BERGER C

Structured epitaxial graphene: growth and properties

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HU YK, RUAN M, GUO ZL, DONG R, PALMER J, HANKINSON J, BERGER C, DE HEER WA

Epitaxial graphene electronic structure and transport

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DE HEER WA, BERGER C, WU XS, SPRINKLE M, HU Y, RUAN M, STROSCIO JA, FIRST PN, HADDON R, PIOT B, FAUGERAS C, POTEMSKI M, MOON JS

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

JOURNAL OF PHYSICS DAPPLIED PHYSICS

PUYBARET R, HANKINSON J, PALMER J, BOUVIER C, OUGAZZADEN A, VOSS PL, BERGER C, DE HEER WA