国家/地区 Korea（6）
关键词
出版物
出版时间 2016（6）
机构 GWANGJU INST SCI TECHNOL（6）
作者 KIM YJ（2） LEE BH（2）

Demonstration of Complementary Ternary Graphene Field-Effect Transistors

SCIENTIFIC REPORTS

KIM Y, KIM SY, NOH J, SHIM C, JUNG U, LEE SK, CHANG KE, CHO C, LEE BH

Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes

CURRENT APPLIED PHYSICS

MIN JH, SEO TH, CHOI SB, KIM K, LEE JY, PARK MD, KIM MJ, SUH EK, KIM JR, LEE DS

Origin of the channel width dependent field effect mobility of graphene field effect transistors

MICROELECTRONIC ENGINEERING

LEE YG, LIM SK, KANG CG, KIM YJ, CHOI DH, CHUNG HJ, CHOI R, LEE BH

A macroscopic model for vertical graphene-organic semiconductor heterojunction field-effect transistors

ORGANIC ELECTRONICS

KIM CH, HLAING H, KYMISSIS I

A new approach of structural and chemical modification on graphene electrodes for high-performance supercapacitors

CARBON

HWANG YH, LEE SM, KIM YJ, KAHNG YH, LEE K

Graphene Oxide-Oxynitride Hybrid Nanoscrolls for Supercapacitor Electrodes with Enhanced Specific Capacitance

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

RANI JR, OH SI, WOO JM, JANG JH