国家/地区 China（9）
关键词
出版物
出版时间 2018（3） 2016（2）
机构 HENAN NORMAL UNIV（9）
作者 XIA CX（9）

Electronic properties of XPtY-Graphene (X/Y = S, Se and Te) contacts

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ZHAO X, NIU WC, ZHAO QY, ZHANG H, XIA CX, WANG TX, DAI XQ, WEI SY

Realization of larger band gap opening of graphene and type-I band alignment with BN intercalation layer in graphene/MX2 heterojunctions

PHYSICAL REVIEW B

GAO Q, LI XP, LI M, WANG TX, HUANG XW, ZHANG QM, LI JB, JIA Y, XIA CX

PtSe2/graphene hetero-multilayer: gate-tunable Schottky barrier height and contact type

NANOTECHNOLOGY

XIA CX, DU J, FANG LZ, LI XP, ZHAO X, SONG XH, WANG TX, LI JB

SnS nanoribbon graphene mixed-dimensional heterostructures: Group VII passivation and quantum size effects

JOURNAL OF ALLOYS COMPOUNDS

XIA CX, FANG LZ, LI XP, XIONG WQ, GENG ZD

Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides

PHYSICAL REVIEW APPLIED

XIA CX, XIONG WQ, XIAO WB, DU J, FANG LZ, LI JB, JIA Y

Electric field-tunable electronic structures of 2D alkaline-earth metal hydroxide-graphene heterostructures

JOURNAL OF MATERIALS CHEMISTRY C

XIA CX, GAO Q, XIONG WQ, DU J, ZHAO X, WANG TX, WEI ZM, LI JB

Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

CARBON

XIONG WQ, XIA CX, ZHAO X, WANG TX, JIA Y

The rectifying and negative differential resistance effects in graphene/h-BN nanoribbon heterojunctions

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

AN YP, ZHANG MJ, WU DP, WANG TX, JIAO ZY, XIA CX, FU ZM, WANG K

Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

APPLIED PHYSICS LETTERS

XIA CX, XUE B, WANG TX, PENG YT, JIA Y