国家/地区 India（6）
关键词 GRAPHENE（4） TRANSISTOR（2）
出版物 APPLIED PHYSICS LET.（2） SENSORS ACTUATORS B.（2）
出版时间 2010（2） 2014（2）
机构 INDIAN INST SCI（6）
作者 BHAT N（6）

Influence of O-2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

GANAPATHI KL, BHAT N, MOHAN S

Graphene based E. coli sensor on flexible acetate sheet

SENSORS ACTUATORS BCHEMICAL

BASU PK, INDUKURI D, KESHAVAN S, NAVRATNA V, VANJARI SRK, RAGHAVAN S, BHAT N

Optimization of HfO2 films for high transconductance back gated graphene transistors

APPLIED PHYSICS LETTERS

GANAPATHI KL, BHAT N, MOHAN S

External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon

NANO LETTERS

MAJUMDAR K, MURALI KVRM, BHAT N, LIN YM

Intrinsic limits of subthreshold slope in biased bilayer graphene transistor

APPLIED PHYSICS LETTERS

MAJUMDAR K, MURALI KVRM, BHAT N, LIN YM

Ultra sensitive NO2 gas detection using the reduced graphene oxide coated etched fiber Bragg gratings

SENSORS ACTUATORS BCHEMICAL

SRIDEVI S, VASU KS, BHAT N, ASOKAN S, SOOD AK