国家/地区 Russia（3）
关键词 4HSIC（2） GRAPHENE（2） RAMAN SPECTROSCOPY（2）
出版物 SEMICONDUCTORS（3）
出版时间
机构 IOFFE INST（3）
作者 DAVYDOV VY（3）

Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, BELOV SV, ZUBOV AV, LEBEDEV SP, LEBEDEV AA

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY

High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

SEMICONDUCTORS

LEBEDEV AA, DAVYDOV VY, USACHOV DY, LEBEDEV SP, SMIRNOV AN, ELISEYEV IA, DUNAEVSKIY MS, GUSHCHINA EV, BOKAI KA, PEZOLDT J