国家/地区 Korea（2）
关键词 MEMORY（2）
出版物
出版时间
机构 JEJU NATL UNIV（2）
作者 RAHMAN SA（2）

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KHAN SA, JEONG HS, RAHMAN SA, BAE JH, KIM WY

Effect of sidewall passivation in ferroelectric-gated graphene memory device

MOLECULAR CRYSTALS LIQUID CRYSTALS

KHAN SA, RAHMAN SA, KIM WY