国家/地区 Korea（7）
关键词 GRAPHENE（3） TRANSISTOR（2）
出版物 SMALL（2）
出版时间 2015（2） 2016（2） 2017（2）
机构 KOREA ADV INST SCI TECHNOL（7）
作者 HWANG WS（7）

A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

SMALL

OH JG, PAK K, KIM CS, BONG JH, HWANG WS, IM SG, CHO BJ

Enhanced performance in graphene RF transistors via advanced process integration

SEMICONDUCTOR SCIENCE TECHNOLOGY

HONG SK, OH JG, HWANG WS, CHO BJ

Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

SMALL

HONG SK, BONG JH, CHO BJ, HWANG WS

Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits

ACS Nano

HONG SK, KIM CS, HWANG WS, CHO BJ

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors

SCIENTIFIC REPORTS

SONG SM, BONG JH, HWANG WS, CHO BJ

Resistance analysis and device design guideline for graphene RF transistors

2D MATERIALS

HONG SK, JEON SC, HWANG WS, CHO BJ

Ultrathin graphene and graphene oxide layers as a diffusion barrier for advanced Cu metallization

APPLIED PHYSICS LETTERS

BONG JH, YOON SJ, YOON A, HWANG WS, CHO BJ