国家/地区 Germany（2）
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出版物
出版时间
机构 MAX PLANCK GESELL（2）
作者 SCHEFFLER M（2）

Two-Step Mechanism for Low-Temperature Oxidation of Vacancies in Graphene

PHYSICAL REVIEW LETTERS

CARLSSON JM, HANKE F, LINIC S, SCHEFFLER M

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3 x 3)-3C-SiC((1)over-bar(1)over-bar(1)over-bar) reconstruction

PHYSICAL REVIEW B

NEMEC L, LAZAREVIC F, RINKE P, SCHEFFLER M, BLUM V