国家/地区 Taiwan（22）
关键词 GRAPHENE（6） SI（5） DEFECT（4）
ELECTRICAL PROPERTI.（3） ELECTRICAL PROPERTY（3） POLYMER（3）
68（2） 72（2） DIODE（2）
NANOSTRUCTURE（2） SCHOTTKY BARRIER HE.（2） SEMICONDUCTOR（2）
出版物 APPLIED PHYSICS AMA.（5） APPLIED PHYSICS LET.（5） APPLIED SURFACE SCI.（2）
INDIAN JOURNAL OF P.（2） MATERIALS CHEMISTRY.（2）
出版时间 2014（9） 2013（4） 2015（4） 2012（2） 2020（2）
机构 NATL CHANGHUA UNIV EDUC（22）
作者 LIN YJ（22）

Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

INDIAN JOURNAL OF PHYSICS

LIN YJ, WU CL, KE ZY, CHANG HC

Electrochemical properties and trap states of TiO2 nanoparticles modified by doping with graphene and used as counter electrodes for dye-sensitized solar cell applications

INDIAN JOURNAL OF PHYSICS

LIN YJ, WU CL, CHANG HC

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

APPLIED SURFACE SCIENCE

LIN YJ, ZENG JJ

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

APPLIED SURFACE SCIENCE

LIN YJ, LIN JH

Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

ZENG JJ, LIN YJ

Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN YJ, YANG SH

Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Effects of H2O2 treatment on the optoelectronic property of poly(3-hexylthiophene) doped with the reduced graphene oxide sheets/Si-nanowire arrays/n-type Si diodes

MATERIALS CHEMISTRY PHYSICS

CHIN YM, LIN YJ

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

MATERIALS CHEMISTRY PHYSICS

ZENG JJ, LIN YJ

Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ