国家/地区 Usa（5）
关键词
出版物 PHYSICAL REVIEW B（3）
出版时间 2011（5）
机构 NATL RENEWABLE ENERGY LAB（5）
作者 HUANG B（4） WEI SH（3）

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

PHYSICAL REVIEW B

HUANG B, XU Q, WEI SH

Graphene formation on step-free 4H-SiC(0001)

JOURNAL OF APPLIED PHYSICS

BOLEN ML, COLBY R, STACH EA, CAPANO MA

Strain control of magnetism in graphene decorated by transition-metal atoms

PHYSICAL REVIEW B

HUANG B, YU JJ, WEI SH

Controlling doping in graphene through a SiC substrate: A first-principles study

PHYSICAL REVIEW B

HUANG B, XIANG HJ, WEI SH

Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics

PHYSICS LETTERS A

HUANG B