国家/地区 China（3）
关键词
出版物
出版时间 2016（2）
机构 NORTHEAST NORMAL UNIV（3）
作者 ZHANG XH（3）

Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device

IEEE ELECTRON DEVICE LETTERS

SHI KX, WANG ZQ, XU HY, XU Z, ZHANG XH, ZHAO XN, LIU WZ, YANG GC, LIU YC

Restraining Capacity Increase To Achieve Ultrastable Lithium Storage: Case Study of a Manganese(II) Oxide/Graphene-Based Nanohybrid and Its Full-Cell Performance

CHEMELECTROCHEM

LIU DH, LI W, WAN F, FAN CY, WANG YY, ZHANG LL, LU HY, XING YM, ZHANG XH, WU XL

P2-Na2/3Ni1/3Mn5/9Al1/9O2 Microparticles as Superior Cathode Material for Sodium-Ion Batteries: Enhanced Properties and Mechanisam via Graphene Connection

ACS APPLIED MATERIALS INTERFACES

ZHANG XH, PANG WL, WAN F, GUO JZ, LU HY, LI JY, XING YM, ZHANG JP, WU XL