国家/地区 | China(4) |
关键词 | |
出版物 | APPLIED PHYSICS LETTERS(4) |
出版时间 | 2011(2) |
机构 | PEKING UNIV(4) |
作者 | DAI L(4) |
The evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate
APPLIED PHYSICS LETTERS
LIU C, MA YG, LI WS, DAI L
APPLIED PHYSICS LETTERS
SUN T, GUO ZD, GU YT, LI HY, DONG GF, SHI ZJ, DAI L, QIN GG
APPLIED PHYSICS LETTERS
SUN T, WANG ZL, SHI ZJ, RAN GZ, XU WJ, WANG ZY, LI YZ, DAI L, QIN GG
APPLIED PHYSICS LETTERS
SUN T, WANG ZL, SHI ZJ, RAN GZ, XU WJ, WANG ZY, LI YZ, DAI L, QIN GG