国家/地区 China（6）
关键词
出版物 NANOSCALE（2）
出版时间 2011（3）
机构 SHANDONG UNIV（6）
作者 MA YD（6）

Graphene/g-C3N4 bilayer: considerable band gap opening and effective band structure engineering

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

LI XR, DAI Y, MA YD, HAN SH, HUANG BB

Graphene-diamond interface: Gap opening and electronic spin injection

PHYSICAL REVIEW B

MA YD, DAI Y, GUO M, HUANG BB

First-Principles Study of the Graphene@MoSe2 Heterobilayers

JOURNAL OF PHYSICAL CHEMISTRY C

MA YD, DAI Y, WEI W, NIU CW, YU L, HUANG BB

Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene

NANOSCALE

MA YD, DAI Y, GUO M, NIU CW, YU L, HUANG BB

Graphene adhesion on MoS2 monolayer: An ab initio study

NANOSCALE

MA YD, DAI Y, GUO M, NIU CW, HUANG BB

Lateral heterojunctions within monolayer h-BN/graphene: a first-principles study

RSC ADVANCES

SUN QL, DAI Y, MA YD, WEI W, HUANG BB