国家/地区 China（5）
关键词
出版物 JOURNAL OF APPLIED .（2）
出版时间 2015（2）
机构 SHANGHAI UNIV（5）
作者 BAN Y（5）

Delay time and Hartman effect in strain engineered graphene

JOURNAL OF APPLIED PHYSICS

CHEN X, DENG ZY, BAN Y

Goos-Hanchen-like shifts for Dirac fermions in monolayer graphene barrier

EUROPEAN PHYSICAL JOURNAL B

CHEN X, TAO JW, BAN Y

Graphene-assisted resonant transmission and enhanced Goos-Hanchen shift in a frustrated total internal reflection configuration

OPTICS LETTERS

CHEN Y, BAN Y, ZHU QB, CHEN X

Electronic Transport in Asymmetric Graphene Superlattice with Internal Potential Well

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

BAN Y, WANG LG, CHEN X

Tunable delay time and Hartman effect in graphene magnetic barriers

JOURNAL OF APPLIED PHYSICS

BAN Y, WANG LJ, CHEN X