国家/地区 Usa（3）
关键词
出版物
出版时间 2016（2）
机构 SO ILLINOIS UNIV（3）
作者 JAYASEKERA T（3）

Ge cages at the SiC/graphene interface: A first principles calculation

JOURNAL OF CRYSTAL GROWTH

SIRIKUMARA HI, BOHORQUEZBALLEN J, JAYASEKERA T

Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

JOURNAL OF APPLIED PHYSICS

SIRIKUMARA HI, JAYASEKERA T

Symmetry induced semimetal-semiconductor transition in doped graphene

SCIENTIFIC REPORTS

SIRIKUMARA HI, PUTZ E, ALABBOODI M, JAYASEKERA T