国家/地区 Japan（6）
关键词
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2011（4）
机构 TOHOKU UNIV（6）
作者 ABE S（6）

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment

JAPANESE JOURNAL OF APPLIED PHYSICS

SANBONSUGE S, ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

APPLIED PHYSICS EXPRESS

FUKIDOME H, ABE S, TAKAHASHI R, IMAIZUMI K, INOMATA S, HANDA H, SAITO E, ENTA Y, YOSHIGOE A, TERAOKA Y, KOTSUGI M, OHKOUCHI T, KINOSHITA T, ITO S, SUEMITSU M

Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process

JAPANESE JOURNAL OF APPLIED PHYSICS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations

JAPANESE JOURNAL OF APPLIED PHYSICS

HANDA H, TAKAHASHI R, ABE S, IMAIZUMI K, SAITO E, JUNG MH, ITO S, FUKIDOME H, SUEMITSU M

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

JOURNAL OF MATERIALS CHEMISTRY

FUKIDOME H, TAKAHASHI R, ABE S, IMAIZUMI K, HANDA H, KANG HC, KARASAWA H, SUEMITSU T, OTSUJI T, ENTA Y, YOSHIGOE A, TERAOKA Y, KOTSUGI M, OHKOUCHI T, KINOSHITA T, SUEMITSU M

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

NANOSCALE RESEARCH LETTERS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M