国家/地区 Japan（7）
关键词 GRAPHENE（3） CONTACT RESISTANCE（2） FET（2）
SILICON（2）
出版物 JAPANESE JOURNAL OF.（3） SOLIDSTATE ELECTRON.（2）
出版时间 2010（5） 2011（2）
机构 TOHOKU UNIV（7）
作者 KARASAWA H（7）

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials

JOURNAL OF INFRARED MILLIMETER TERAHERTZ WAVES

KARASAWA H, KOMORI T, WATANABE T, SATOU A, FUKIDOME H, SUEMITSU M, RYZHII V, OTSUJI T

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

JOURNAL OF MATERIALS CHEMISTRY

FUKIDOME H, TAKAHASHI R, ABE S, IMAIZUMI K, HANDA H, KANG HC, KARASAWA H, SUEMITSU T, OTSUJI T, ENTA Y, YOSHIGOE A, TERAOKA Y, KOTSUGI M, OHKOUCHI T, KINOSHITA T, SUEMITSU M

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010)

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

JAPANESE JOURNAL OF APPLIED PHYSICS

OLACVAW R, KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T