国家/地区 Japan（4）
关键词
出版物
出版时间 2012（2）
机构 TOHOKU UNIV（4）
作者 IDE T（4）

Influence of interface dipole layers on the performance of graphene field effect transistors

CARBON

NAGAMURA N, FUKIDOME H, NAGASHIO K, HORIBA K, IDE T, FUNAKUBO K, TASHIMA K, TORIUMI A, SUEMITSU M, HORN K, OSHIMA M

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

SCIENTIFIC REPORTS

FUKIDOME H, IDE T, KAWAI Y, SHINOHARA T, NAGAMURA N, HORIBA K, KOTSUGI M, OHKOCHI T, KINOSHITA T, KUMIGHASHIRA H, OSHIMA M, SUEMITSU M

Precise control of epitaxy of graphene by microfabricating SiC substrate

APPLIED PHYSICS LETTERS

FUKIDOME H, KAWAI Y, FROMM F, KOTSUGI M, HANDA H, IDE T, OHKOUCHI T, MIYASHITA H, ENTA Y, KINOSHITA T, SEYLLER T, SUEMITSU M

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

IDE T, KAWAI Y, HANDA H, FUKIDOME H, KOTSUGI M, OHKOCHI T, ENTA Y, KINOSHITA T, YOSHIGOE A, TERAOKA Y, SUEMITSU M