国家/地区 Japan（3）
关键词
出版物 JAPANESE JOURNAL OF.（2）
出版时间 2016（3）
机构 TOHOKU UNIV（3）
作者 SUEMITSU T（3）

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

JOURNAL OF LIGHTWAVE TECHNOLOGY

SUGAWARA K, KAWASAKI T, TAMAMUSHI G, MASTURA H, DOBROIU A, YOSHIDA T, SUEMITSU T, FUKIDOME H, SUEMITSU M, RYZHII V, IWATSUKI K, KUWANO S, KANI JI, TERADA J, OTSUJI T