国家/地区 Japan（20）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（20）
出版时间 2011（7） 2010（4） 2016（4） 2012（3）
机构 TOHOKU UNIV（20）
作者 FUKIDOME H（15） SUEMITSU M（15） HANDA H（11） OTSUJI T（10）
SUEMITSU T（9） TAKAHASHI R（5） KANG HC（4） MIYAMOTO Y（4）
ABE S（3） CHO WJ（3） IMAIZUMI K（3） JUNG MH（3）
KARASAWA H（3） KIM KS（3） OLACVAW R（3） PARK GH（3）
TERAOKA Y（3） YOSHIGOE A（3） HASEGAWA M（2） OGAWA S（2）

Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al2O3 Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

OGAWA S, YAMADA T, ISHIDZUKA S, YOSHIGOE A, HASEGAWA M, TERAOKA Y, TAKAKUWA Y

Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy

JAPANESE JOURNAL OF APPLIED PHYSICS

OGAWA S, YAMADA T, ISHIZDUKA S, YOSHIGOE A, HASEGAWA M, TERAOKA Y, TAKAKUWA Y

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

IDE T, KAWAI Y, HANDA H, FUKIDOME H, KOTSUGI M, OHKOCHI T, ENTA Y, KINOSHITA T, YOSHIGOE A, TERAOKA Y, SUEMITSU M

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment

JAPANESE JOURNAL OF APPLIED PHYSICS

SANBONSUGE S, ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process

JAPANESE JOURNAL OF APPLIED PHYSICS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Empirical Modeling of Metal-Contact Effects on Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

NOUCHI R, TANIGAKI K

Theoretical Study of Population Inversion in Graphene under Pulse Excitation

JAPANESE JOURNAL OF APPLIED PHYSICS

SATOU A, OTSUJI T, RYZHII V

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M