国家/地区 Japan（7）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（7）
出版时间 2011（7）
机构 TOHOKU UNIV（7）
作者 FUKIDOME H（5） HANDA H（5） SUEMITSU M（5） OTSUJI T（4）
TAKAHASHI R（4） JUNG MH（3） SUEMITSU T（3） ABE S（2）
IMAIZUMI K（2）

Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process

JAPANESE JOURNAL OF APPLIED PHYSICS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Empirical Modeling of Metal-Contact Effects on Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

NOUCHI R, TANIGAKI K

Theoretical Study of Population Inversion in Graphene under Pulse Excitation

JAPANESE JOURNAL OF APPLIED PHYSICS

SATOU A, OTSUJI T, RYZHII V

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations

JAPANESE JOURNAL OF APPLIED PHYSICS

HANDA H, TAKAHASHI R, ABE S, IMAIZUMI K, SAITO E, JUNG MH, ITO S, FUKIDOME H, SUEMITSU M