国家/地区 Usa（7）
关键词 GRAPHENE（3）
出版物 NANO LETTERS（2）
出版时间 2012（7）
机构 USN（7）
作者 FRIEDMAN AL（7）

Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

CRESS CD, CHAMPLAIN JG, ESQUEDA IS, ROBINSON JT, FRIEDMAN AL, MCMORROW JJ

Low-resistance spin injection into silicon using graphene tunnel barriers

NATURE NANOTECHNOLOGY

VAN T ERVE OMJ, FRIEDMAN AL, COBAS E, LI CH, ROBINSON JT, JONKER BT

Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions

NANO LETTERS

COBAS E, FRIEDMAN AL, VAN T ERVE OMJ, ROBINSON JT, JONKER BT

Giant negative magnetoresistance and a transition from strong to weak localization in hydrogenated graphene

PHYSICAL REVIEW B

MATIS BR, BULAT FA, FRIEDMAN AL, HOUSTON BH, BALDWIN JW

Bilayer graphene by bonding CVD graphene to epitaxial graphene

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

JERNIGAN GG, ANDERSON TJ, ROBINSON JT, CALDWELL JD, CULBERTSON JC, MYERSWARD R, DAVIDSON AL, ANCONA MG, WHEELER VD, NYAKITI LO, FRIEDMAN AL, CAMPBELL PM, GASKILL DK

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

NANO LETTERS

NYAKITI LO, MYERSWARD RL, WHEELER VD, IMHOFF EA, BEZARES FJ, CHUN H, CALDWELL JD, FRIEDMAN AL, MATIS BR, BALDWIN JW, CAMPBELL PM, CULBERTSON JC, EDDY CR, JERNIGAN GG, GASKILL DK

Surface Doping and Band Gap Tunability in Hydrogenated Graphene

ACS NANO

MATIS BR, BURGESS JS, BULAT FA, FRIEDMAN AL, HOUSTON BH, BALDWIN JW