国家/地区 Usa（5）
关键词
出版物 JOURNAL OF VACUUM S.（2）
出版时间 2012（3）
机构 UNIV NOTRE DAME（5）
作者 HWANG WS（5）

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, ZHAO P, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING H, SEABAUGH A, JENA D

Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene

APPLIED PHYSICS LETTERS

HWANG WS, TAHY K, LI XS, XING HL, SEABAUGH AC, SUNG CY, JENA D

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D

Broadband graphene terahertz modulators enabled by intraband transitions

NATURE COMMUNICATIONS

SENSALERODRIGUEZ B, YAN RS, KELLY MM, FANG T, TAHY K, HWANG WS, JENA D, LIU L, XING HG

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

APL MATERIALS

HWANG WS, ZHAO P, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, ROBINSON JA, HAENSCH W, XING H, SEABAUGH A, JENA D