PHYSICAL REVIEW LETTERS
WAKAMURA T, REALE F, PALCZYNSKI P, GUERON S, MATTEVI C, BOUCHIAT H
SEMICONDUCTOR SCIENCE TECHNOLOGY
NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P
APPLIED PHYSICS LETTERS
NGUYEN VH, NGUYEN MC, NGUYEN HV, SAINTMARTIN J, DOLLFUS P
APPLIED PHYSICS LETTERS
TRAN VT, SAINTMARTIN J, DOLLFUS P
JOURNAL OF PHYSICAL CHEMISTRY C
ROGEZ B, YAN H, LE MOAL E, LEVEQUEFORT S, BOERDUCHEMIN E, YAO F, LEE YH, ZHANG Y, WEGNER KD, HILDEBRANDT N, MAYNE A, DUJARDIN G
JOURNAL OF PHYSICAL CHEMISTRY C
DENG CX, LIN WW, AGNUS G, DRAGOE D, PIERUCCI D, OUERGHI A, EIMER S, BARISIC I, RAVELOSONA D, CHAPPERT C, ZHAO WS
PHYSICAL REVIEW B
SOULE P, FRANZ M
JOURNAL OF PHYSICS DAPPLIED PHYSICS
NGUYEN VH, ALARCON A, BERRADA S, DO VN, STMARTIN J, QUERLIOZ D, BOURNEL A, DOLLFUS P
JOURNAL OF APPLIED PHYSICS
ZHANG H, BABICHEV AV, JACOPIN G, LAVENUS P, JULIEN FH, EGOROV AY, ZHANG J, PAUPORTE T, TCHERNYCHEVA M
APPLIED PHYSICS LETTERS
BABICHEV AV, ZHANG H, LAVENUS P, JULIEN FH, EGOROV AY, LIN YT, TU LW, TCHERNYCHEVA M