国家/地区 Italy（3）
关键词 BORON DOPING（2） GRAPHENE RIBBON（2） MOBILITY GAP（2）
出版物
出版时间
机构 UNIV PISA（3）
作者 CRESTI A（3）

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

MATERIALS

MARCONCINI P, CRESTI A, ROCHE S

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S

Current profiles in gated graphene ribbons

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

CRESTI A, GROSSO G, PARRAVICINI GP