国家/地区 Usa（5）
关键词 RESONANT TUNNELING（3） BILAYER GRAPHENE（2） HEXAGONAL BORON NIT.（2）
NEGATIVE DIFFERENTI.（2）
出版物 NANO LETTERS（2）
出版时间 2015（2） 2016（2）
机构 UNIV TEXAS AUSTIN（5）
作者 KANG S（5）

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

SANNE A, MOVVA HCP, KANG S, MCCLELLAN C, CORBET CM, BANERJEE SK

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors

NANO LETTERS

KANG S, PRASAD N, MOVVA HCP, RAI A, KIM K, MOU XH, TANIGUCHI T, WATANABE K, REGISTER LF, TUTUC E, BANERJEE SK

Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors

JOURNAL OF APPLIED PHYSICS

KANG S, MOVVA HCP, SANNE A, RAI A, BANERJEE SK

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

IEEE ELECTRON DEVICE LETTERS

KANG S, FALLAHAZAD B, LEE K, MOVVA H, KIM K, CORBET CM, TANIGUCHI T, WATANABE K, COLOMBO L, REGISTER LF, TUTUC E, BANERJEE SK

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

NANO LETTERS

FALLAHAZAD B, LEE K, KANG S, XUE JM, LARENTIS S, CORBET C, KIM K, MOVVA HCP, TANIGUCHI T, WATANABE K, REGISTER LF, BANERJEE SK, TUTUC E