国家/地区 Japan（7）
关键词 ELECTRONIC STRUCTUR.（2） FET（2）
出版物 APPLIED PHYSICS EXP.（3） CARBON（2）
出版时间 2020（3） 2019（2）
机构 UNIV TSUKUBA（7）
作者 GAO YL（7）

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

APPLIED PHYSICS EXPRESS

GAO YL, MARUYAMA M, OKADA S

Edge morphology effect on field emission properties of graphene thin films

CARBON

GAO YL, OKADA S

Energetics and electronic structures of N-doped graphene nanoribbons with pyridinic and graphitic edges

JAPANESE JOURNAL OF APPLIED PHYSICS

YASUMA A, OKADA S, GAO YL, MARUYAMA M

Field emission properties of edge-functionalized graphene

CARBON

GAO YL, OKADA S

Electrostatic properties of graphene edges for electron emission under an external electric field

APPLIED PHYSICS LETTERS

GAO YL, OKADA S

Electrostatic potential barrier for electron emission at graphene edges induced by the nearly free electron states

APPLIED PHYSICS EXPRESS

GAO YL, OKADA S